1. product pro?le 1.1 general description npn resistor-equipped transistors. pnp complement: pdta113et. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w rev. 02 8 april 2004 objective data sheet n built-in bias resistors n reduces component count n simpli?es circuit design n reduces pick and place costs. n general purpose switching and ampli?cation n circuit driver. n inverter and interface circuits table 1: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage - - 50 v i o output current (dc) - - 100 ma r1 bias resistor - 1 - k w r2 bias resistor - 1 - k w table 2: discrete pinning pin description simpli?ed outline symbol 1 base 2 emitter 3 collector top view 12 3 sym007 3 2 1 r1 r2
9397 750 13066 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 02 8 april 2004 2 of 7 philips semiconductors PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w 3. ordering information 4. marking [1] * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. 5. limiting values [1] refer to standard mounting conditions. 6. thermal characteristics [1] refer to standard mounting conditions. table 3: ordering information type number package name description version PDTC113ET - plastic surface mounted package; 3 leads sot23 table 4: marking type number marking code [1] PDTC113ET *14 table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 10 v v i input voltage positive - +10 v negative - - 10 v i o output current (dc) - 100 ma i cm peak collector current - 100 ma p tot total power dissipation t amb 25 c [1] - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c table 6: thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air [1] 500 k/w
9397 750 13066 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 02 8 april 2004 3 of 7 philips semiconductors PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w 7. characteristics table 7: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a --1 m a v ce =30v; i b =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb =5v; i c =0a --4ma h fe dc current gain v ce =5v; i c =40ma 30 - - v cesat collector-emitter saturation voltage i c = 30 ma; i b = 1.5 ma - - 150 mv v i(off) input-off voltage i c = 100 m a; v ce =5v - 500 mv v i(on) input-on voltage i c = 20 ma; v ce = 300 mv 2 -v r1 input resistor 0.7 1 1.3 k w r2/r1 resistor ratio 0.8 1 1.2 c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz -- pf
9397 750 13066 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 02 8 april 2004 4 of 7 philips semiconductors PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w 8. package outline fig 1. package outline. unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
9397 750 13066 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 02 8 april 2004 5 of 7 philips semiconductors PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w 9. revision history table 8: revision history document id release date data sheet status change notice order number supersedes PDTC113ET_2 20040408 objective speci?cation - 9397 750 13066 PDTC113ET_1 modi?cations: ? t ab le 5 : changed i o and i cm minimum values to maximum values. PDTC113ET_1 20040316 objective speci?cation - 9397 750 12552 -
philips semiconductors PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w 9397 750 13066 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 02 8 april 2004 6 of 7 10. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 12. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 13. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 8 april 2004 document order number: 9397 750 13066 published in the netherlands philips semiconductors PDTC113ET npn resistor-equipped transistor; r1 = 1 k w , r2=1k w 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 6 11 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 12 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 13 contact information . . . . . . . . . . . . . . . . . . . . . 6
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